, u na. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MPS3826 (silicon) mps3827 npn silicon annular transistors . . . designed for use in general-purpose amplifier applications. ? collector emitter breakdown voltage - bvceo = 45 vdc (win) @ \c - 10 madc ? high current-gain? bandwidth product - fj * 600 mhr (typl @ ic - 10 madc ? low output capacitance ? cob - 2.2 pf (typ) 9 vcb = 10 vdc maximum ratings r>tin< collector-emitter voltage collector-base voltage emitter-bate voltage collector current ? continuous total powar dissipation ? ta - 25c derate above 2sc total power dissipation ? tc - 25c derate above 25c operating and storage junction temperature range symbol value unit vceo 45 vdc vcb 60 vdc vgb 4.0 vdc ie 100 madc pd 350 mw 2.8 mw/c pd 1.0 watt 8.0 mw/c tj. t?g -bbto-uso c thermal characteristics characteristics thermal resistance, junction to ambient (it thermal resistance, junction to gate symbol max unit rflja 3s7 c/w r?jc 125 c/w '1' r0ja '5 measured with the device soldered into a typical printed circuit boerd. npn silicon amplifier transistors / n ^ffi /* n ! ?pf^6 uz rfi m 3!t -h q h? 1 (rnjdri mr style 1 pin \r 2 base 3 collector to 92 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders.
MPS3826, mps3827 (continued) 'electrical characteristics (ta > 2sc unless otherwise nowd) clurk?ri?ic symbol min typ max off characteristics collector-emitter breakdown voltage (1) dc* iqmadc, lg-0) collector-em breakdown voltage dc-ioouadc. ie?oi emitter-base breakdown voltage (ie - 100 nadc, ic-oi collector cutoff current (vcb-30vdc. ie = 0) (vcb - 30 vdc. if - 0. ta =? 8sc) bvceo bvcbo bvebo icbo 45 60 4.0 - - -" " - - ? " 100 5.0 vdc vdc vdc nadc uadc on characteristics dc current gain iic ? 10 madc. vce - 10 vdc) MPS3826 mps3827 "pe 40 100 - 17s 160 400- - - dynamic characteristics current-gain ? bandwidth product (ic- 10 madc. vce- 10 vdc, f? 100 mhz) output capacitance (vcb ' 10 vdc- ie " 0. f = 1- mhzl collector-base time constant (ie - 10 madc, vcb - 10 vdc, f - 31.9 mhz) ?t cob rb'cc 200 - - soo 22 - 800 3.5 100 mhz f>f ps 11! pulse test: pulse width <300 us. duty cycle <2.0%.
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